Scandium nitride

Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation.[1] It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV.[1][2] These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods.[2][3] Scandium Nitride is also an effective gate for semiconductors on a silicon dioxide (SiO2) or hafnium dioxide (HfO2) substrate.[4]

Scandium nitride
Names
IUPAC name
Scandium nitride
Other names
Azanylidynescandium
Nitridoscandium
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.042.938
EC Number
  • 247-247-2
  • InChI=1S/N.Sc
    Key: CUOITRGULIVMPC-UHFFFAOYSA-N
  • N#[Sc]
Properties
ScN
Molar mass 58.963
Density 4.4 g/cm3
Melting point 2,600 °C (4,710 °F; 2,870 K)
Hazards
GHS labelling:
GHS07: Exclamation mark
Danger
H228
Related compounds
Other anions
 Scandium phosphide
Scandium arsenide
Scandium antimonide
Scandium bismuthide
Other cations
 Yttrium nitride
Lutetium nitride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references


References
  1. Gu, Zheng; Edgar, J H; Pomeroy, J; Kuball, M; Coffey, D W (August 2004). "Crystal Growth and Properties of Scandium Nitride". Journal of Materials Science: Materials in Electronics. 15 (8): 555–559. doi:10.1023/B:JMSE.0000032591.54107.2c. S2CID 98462001.
  2. Biswas, Bidesh; Saha, Bivas (2019-02-14). "Development of semiconducting ScN". Physical Review Materials. 3 (2): 020301. Bibcode:2019PhRvM...3b0301B. doi:10.1103/physrevmaterials.3.020301. ISSN 2475-9953. S2CID 139544303.
  3. Zhang, Guodong; Kawamura, Fumio; Oshima, Yuichi; Villora, Encarnacion; Shimamura, Kiyoshi (4 August 2016). "Synthesis of Scandium Nitride Crystals from Indium–Scandium Melts". International Journal of Applied Ceramic Technology. 13 (6): 1134–1138. doi:10.1111/ijac.12576.
  4. Yang, Hyundoek; Heo, Sungho; Lee, Dongkyu; Choi, Sangmoo; Hwang, Hyunsang (13 January 2006). "Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2". Japanese Journal of Applied Physics. 45 (2): L83–L85. Bibcode:2006JaJAP..45L..83Y. doi:10.1143/JJAP.45.L83. S2CID 121206924.


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